050-7412 rev d 2-2004 APT13GP120B typical performance curves a new generation of high voltage power igbts. using punch-through technology and a proprietary metal gate, this igbt has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. in many cases, the power mos 7 ? igbt provides a lower cost alternative to a power mosfet. ? low conduction loss ? 100 khz operation @ 600v, 10a ? low gate charge ? 50 khz operation @ 600v, 16a ? ultrafast tail current shutoff ? rbsoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 1200 3 4.5 6 3.3 3.9 3.0 250 2500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l APT13GP120B 1200 20 30 41 20 50 50a @ 960v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c reverse bias safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt to-247 g c e APT13GP120B 1200v g c e
050-7412 rev d 2-2004 APT13GP120B dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 13a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 600v v ge = 15v i c = 13a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 13a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 1145 90 15 7.5 55 8 26 50 9 12 28 34 114 330 165 9 12 70 200 223 710 840 unit pf v nc a ns j ns j unit c/w gm min typ max .50 n/a 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7412 rev d 2-2004 APT13GP120B typical performance curves t j = 25c. 250s pulse test <0.5 % duty cycle t c = 125c t c = 25c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c 250s pulse test <0.5 % duty cycle v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction trmperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 012345 6 0123456 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 6 8 10 12 14 16 -55 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 40 35 30 25 20 15 10 5 0 16 14 12 10 8 6 4 2 0 5 4 3 2 1 0 60 50 40 30 20 10 0 40 35 30 25 20 15 10 5 0 40 35 30 25 20 15 10 5 0 6 5 4 3 2 1 0 1.10 1.05 1.00 0.95 0.90 i c = 13a t j = 25c t c = 25c t c = -55c t c = 125c t c = -55c v ce = 960v v ce = 240v v ce = 600v i c = 6.5a i c = 13a i c = 26a i c = 6.5a i c = 13a i c = 26a
050-7412 rev d 2-2004 APT13GP120B t j = 125c, v ge = 10v or 15v v ge =15v,t j =125c v ge =15v,t j =25c t j = 25c, v ge = 10v or 15v t j = 125c, v ge = 10v or 15v e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a t j = 125c,v ge = 15v t j = 25c, v ge = 10v or 15v t j = 25c,v ge = 15v t j = 25 or 125c,v ge = 15v v ce = 600v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 0 10 20 30 40 50 25 50 75 100 125 v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v t j = 125c v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 600v r g = 5 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c , t j =125c r g = 5 ? l = 100 h 14 12 10 8 6 4 2 0 30 25 20 15 10 5 0 1400 1200 1000 800 600 400 200 0 1800 1600 1400 1200 1000 800 600 400 200 0 120 100 80 60 40 20 0 300 250 200 150 100 50 0 1600 1400 1200 1000 800 600 400 200 0 1600 1400 1200 1000 800 600 400 200 0 v ge = 15v
050-7412 rev d 2-2004 APT13GP120B typical performance curves max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = 510 15202530 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area i c , collector current (a) figure 20, operating frequency vs collector current c res c ies c oes t j = 125 c t c = 75 c d = 50 % v ce = 600v r g = 5 ? 3,000 1,000 500 100 10 1 0 10 20 30 40 50 0 200 400 600 800 1000 181 100 50 10 0.216 0.284 0.600f 0.161f power (watts) junction temp. ( ?c) case temperature rc model 0.60 0.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 figure 19b, transient thermal impedance model
050-7412 rev d 2-2004 APT13GP120B figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions t0-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt15df120 v ce figure 21, inductive switching test circuit v cc 90% 90% t d(off) 0 10% t f t j = 125c drainvoltage drain current gate voltage switching energy 90% 10% t r 5% 5% t j = 125c drain current drainvoltage gate voltage 10% t d(on) switching energy
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